Few electron limit of n-type metal oxide semiconductor single electron transistors

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dc.contributor.author Kotekar-Patil, Dharmraj
dc.contributor.author Ruoff, Matthias
dc.contributor.author Kern, Dieter P.
dc.contributor.author Wharam, David A.
dc.date.accessioned 2014-03-18T13:47:48Z
dc.date.available 2014-03-18T13:47:48Z
dc.date.issued 2012
dc.identifier.issn 0957-4484
dc.identifier.uri http://hdl.handle.net/10900/50139
dc.language.iso en de_DE
dc.publisher Iop Publishing Ltd de_DE
dc.relation.uri http://dx.doi.org/10.1088/0957-4484/23/21/215204 de_DE
dc.rights info:eu-repo/semantics/closedAccess
dc.subject.ddc 530 de_DE
dc.subject.ddc 600 de_DE
dc.title Few electron limit of n-type metal oxide semiconductor single electron transistors de_DE
dc.type Article de_DE
utue.quellen.id 20140226071329_02277 de_DE
utue.personen.roh Prati, Enrico
utue.personen.roh De Michielis, Marco
utue.personen.roh Belli, Matteo
utue.personen.roh Cocco, Simone
utue.personen.roh Fanciulli, Marco
utue.personen.roh Kotekar-Patil, Dharmraj
utue.personen.roh Ruoff, Matthias
utue.personen.roh Kern, Dieter P.
utue.personen.roh Wharam, David A.
utue.personen.roh Verduijn, Jan
utue.personen.roh Tettamanzi, Giuseppe C.
utue.personen.roh Rogge, Sven
utue.personen.roh Roche, Benoit
utue.personen.roh Wacquez, Romain
utue.personen.roh Jehl, Xavier
utue.personen.roh Vinet, Maud
utue.personen.roh Sanquer, Marc
dcterms.isPartOf.ZSTitelID Nanotechnology de_DE
dcterms.isPartOf.ZS-Issue Article 215204 de_DE
dcterms.isPartOf.ZS-Volume 23 de_DE
utue.fakultaet 07 Mathematisch-Naturwissenschaftliche Fakultät de_DE


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