A parametrized numerical model to simulate the semiconductor influence of thick film metal oxide gas sensors

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A parametrized numerical model to simulate the semiconductor influence of thick film metal oxide gas sensors

Author: Bonanati, Peter
Tübinger Autor(en):
Bonanati, Peter
Other Contributors: Eberhard Karls Universität Tübingen
Issue year: 2020
Verlagsangabe: Tübingen
Language: English
Full text: http://dx.doi.org/10.15496/publikation-50185
Dokumentart: PhDThesis
Pages: 102, 1 Seiten
Reference: 1737569604
Note: Erscheint auch als Online-Ausgabe
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