Surface nanostructuring of CuIn1-xGaxSe2 films using argon plasma treatment

dc.contributor.author	Bente, Klaus
dc.date.accessioned	2017-09-06T15:00:53Z
dc.date.available	2017-09-06T15:00:53Z
dc.date.issued	2017
dc.identifier.issn	1361-6641
dc.identifier.uri	http://hdl.handle.net/10900/77781
dc.language.iso	en	de_DE
dc.publisher	Iop Publishing Ltd	de_DE
dc.relation.uri	http://dx.doi.org/10.1088/1361-6641/aa6fd9	de_DE
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.ddc	530	de_DE
dc.subject.ddc	600	de_DE
dc.title	Surface nanostructuring of CuIn1-xGaxSe2 films using argon plasma treatment	de_DE
dc.type	Article	de_DE
utue.quellen.id	20170815222223_00314
utue.personen.roh	Zimin, S. P.
utue.personen.roh	Gorlachev, E. S.
utue.personen.roh	Mokrov, D. A.
utue.personen.roh	Amirov, I. I.
utue.personen.roh	Naumov, V. V.
utue.personen.roh	Gremenok, V. F.
utue.personen.roh	Juskenas, R.
utue.personen.roh	Skapas, M.
utue.personen.roh	Kim, W. Y.
utue.personen.roh	Bente, K.
utue.personen.roh	Chung, Y-D
dcterms.isPartOf.ZSTitelID	Semiconductor Science and Technology	de_DE
dcterms.isPartOf.ZS-Issue	Article 075014	de_DE
dcterms.isPartOf.ZS-Volume	32	de_DE
utue.fakultaet	07 Mathematisch-Naturwissenschaftliche Fakultät	de_DE

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