Highly Stable Contact Doping in Organic Field Effect Transistors by Dopant-Blockade Method

dc.contributor.author	Broch, Katharina
dc.date.accessioned	2020-09-11T14:03:16Z
dc.date.available	2020-09-11T14:03:16Z
dc.date.issued	2020
dc.identifier.issn	1616-3028
dc.identifier.uri	http://hdl.handle.net/10900/106766
dc.language.iso	en	de_DE
dc.publisher	Wiley - V C H Verlag Gmbh	de_DE
dc.relation.uri	http://dx.doi.org/10.1002/adfm.202000058	de_DE
dc.subject.ddc	530	de_DE
dc.subject.ddc	540	de_DE
dc.subject.ddc	600	de_DE
dc.title	Highly Stable Contact Doping in Organic Field Effect Transistors by Dopant-Blockade Method	de_DE
dc.type	Article	de_DE
utue.quellen.id	20200715072417_00399
utue.publikation.seiten	Article 2000058	de_DE
utue.personen.roh	Kim, Youngrok
utue.personen.roh	Broch, Katharina
utue.personen.roh	Lee, Woocheol
utue.personen.roh	Ahn, Hebeom
utue.personen.roh	Lee, Jonghoon
utue.personen.roh	Yoo, Daekyoung
utue.personen.roh	Kim, Junwoo
utue.personen.roh	Chung, Seungjun
utue.personen.roh	Sirringhaus, Henning
utue.personen.roh	Kang, Keehoon
utue.personen.roh	Lee, Takhee
dcterms.isPartOf.ZSTitelID	Advanced Functional Materials	de_DE
dcterms.isPartOf.ZS-Issue	28	de_DE
dcterms.isPartOf.ZS-Volume	30	de_DE
utue.fakultaet	07 Mathematisch-Naturwissenschaftliche Fakultät	de_DE